data sheet semiconductor http://www.yeashin.com 1 rev.02 20120705 SS8050 to-92 plastic-encapsulate transistors transistor ( npn ) features power dissipation p cm : 1 w (t a =25 ) : 2 w (t c =25 ) maximum ratings* t a =25 unless otherwise noted symbol parameter value units v cbo collector-base voltage 40 v v ceo collector-emitter voltage 25 v v ebo emitter-base voltage 5 v i c collector current -continuous 1500 ma t j , t stg junction and storage temperature -55-150 *these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic=100ua, i e =0 40 v collector-emitter breakdown voltage v (br)ceo ic=0.1ma, i b =0 25 v emitter-base breakdown voltage v (br)ebo i e =100a, i c =0 5 v collector cut-off current i cbo v cb =40v, i e =0 0.1 a emitter cut-off current i ceo v ce =20v, i e =0 0.1 a emitter cut-off current i ebo v eb =5v, i c =0 0.1 a h fe(1) v ce =1v, i c =100ma 85 400 dc current gain h fe(2) v ce =1v, i c =800ma 40 collector-emitter saturation voltage v ce(sat) i c =800ma, i b =80ma 0.5 v base-emitter saturation voltage v be(sat) i c =800ma, i b =80ma 1.2 v base-emitter voltage v be v ce =1v, i c =10ma 1 v transition frequency f t v ce =10v, i c =50ma,f=30mh z 100 mhz classification of h fe(2) rank b c d e range 85-160 120-200 160-300 300-400 1 2 3 to-92 1. emitter 2. base 3. collector
http://www.yeashin.com 2 rev.02 20120705 SS8050 device characteristics
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